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BLF647

NXP
Part Number BLF647
Manufacturer NXP
Description UHF power LDMOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2...
Datasheet PDF File BLF647 PDF File

BLF647
BLF647

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 800 MHz) • Internal input damping for excellent stability over the whole frequency range.
APPLICATIONS • Communication transmitter applications in the HF to 800 MHz frequency range.
3 4 MBK777 BLF647 PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION 1 2 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap.
The common source is connected to the mounting flange.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.
1 VDS (V) 28 28 PL (W) 120 120 (PEP) Top view Fig.
1 Simplified outline.
Gp (dB) >14.
5 >14.
5 ηD (%) >55 >40 dim (dBc) − ≤−26 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs.
: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Tmb ≤ 25 °C CONDITIONS − − − − −65 − MIN.
MAX.
65 ±15 18 290 +150 200 V V A W °C °C UNIT 2001 Nov 27 2 Philips Semiconductors Product specification UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to hea...


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