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BLF644P

NXP
Part Number BLF644P
Manufacturer NXP
Description Broadband power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General desc...
Datasheet PDF File BLF644P PDF File

BLF644P
BLF644P

Overview
BLF644P Broadband power LDMOS transistor Rev.
2 — 27 June 2014 Product data sheet 1.
Product profile 1.
1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications.
The transistor is suitable for the frequency range HF to 1300 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
Table 1.
Typical performance RF performance at Tcase = 25 C in a common source test circuit.
Test signal f VDS PL (MHz) (V) (W) CW, class-A 860 32 100 CW pulsed, class-AB 860 32 100 2-tone, class-AB 860 32 45 860 32 30 Gp (dB) 23 23.
5 23 24 D IMD (%) (dBc) 65 66 50 25 40 35 1.
2 Features and benefits  Integrated ESD protection  Excellent ruggedness  High power gain  High efficiency  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  Communication transmitter applications in the HF to 1300 MHz frequency range  Industrial applications in the HF to 1300 MHz frequency range  Broadcast transmitters NXP Semiconductors BLF644P Broadband power LDMOS transistor 2.
Pinning information Table 2.
Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Connected to flange.
3.
Ordering information Simplified outline Graphic symbol         [1] DDD Table 3.
Ordering information Type number Package Name Description BLF644P - flanged LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT1228A 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VDS drain-source voltage VGS gate-source voltage 0.
5 Tstg storage temperature Tj junction temperature 65 [1] - Max 65 +11 +150 225 Unit V V C C [1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculato...


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