DISCRETE SEMICONDUCTORS
DATA SHEET
BLV935 UHF power
transistor
Product specification 1995 Jun 29
Philips Semiconductors
Product specification
UHF power
transistor
FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits.
APPLICATIONS • Base stations in the 820 to 980 MHz range.
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BLV935
DESCRIPTION
NPN silicon planar epitaxial
transistor intended for common emitter class-AB operation.
The
transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap...