DatasheetsPDF.com

BLV910

NXP
Part Number BLV910
Manufacturer NXP
Description UHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification 1995 Apr 11 Philips Semiconductor...
Datasheet PDF File BLV910 PDF File

BLV910
BLV910

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification 1995 Apr 11 Philips Semiconductors Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input matching to achieve high power gain and easy design of wideband circuits • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
APPLICATIONS • Base station transmitters in the 820 to 960 MHz range.
handbook, halfpage BLV910 DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation.
The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap.
All leads are isolated from the flange.
2 4 6 c b PINNING - SOT171 PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter base collector emitter emitter Fig.
1 Simplified outline and symbol.
Top view DESCRIPTION 1 3 5 MAM141 e QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit.
MODE OF OPERATION CW, class-AB f (MHz) 960 VCE (V) 26 PL (W) 10 Gp (dB) ≥ 11 ηC (%) ≥ 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions.
After use, dispose of as chemical or special waste according to the regulations applying at the location of the user.
It must never be thrown out with the general or domestic waste.
1995 Apr 11 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature up to Tmb = 2...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)