DatasheetsPDF.com

BLV93

Part Number	BLV93
Manufacturer	NXP
Description	UHF power transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BLV93 UHF power transistor Product speciﬁcation March 1993 Philips Semiconductors ...
Datasheet	BLV93 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BLV93 UHF power transistor Product speciﬁcation March 1993 Philips Semiconductors Product speciﬁcation UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.
FEATURES BLV93 • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • internal input matching to achieve an optimum wideband capability and high power gain • gold metallization ensures excellent reliability.
The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171).
All leads are isolated from the flange.
QUICK REFERENCE DATA R.
F.
p...

Similar Datasheet

BLV10 VHF power transistor - NXP
BLV100 UHF power transistor - NXP
BLV103 UHF power transistor - NXP
BLV108 Vertical N-channel MOSFET - SHANGHAI BELLING
BLV11 VHF power transistor - NXP
BLV12 VHF power transistor - NXP
BLV193 UHF power transistor - NXP
BLV194 UHF power transistor - NXP
BLV1N60 N-Channel Enhancement Mode Power MOSFET - BELLING
BLV1N60A N-Channel Enhancement Mode Power MOSFET - BELLING

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)