MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BDX33B/D
Darlington Complementary Silicon Power
Transistors
.
.
.
designed for general purpose and low speed switching applications.
• High DC Current Gain — hFE = 2500 (typ.
) at IC = 4.
0 • Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.
) — BDX33B, 34B VCEO(sus) = 100 Vdc (min.
) — BDX33C, 34C • Low Collector–Emitter Saturation Voltage VCE(sat) = 2.
5 Vdc (max.
) at IC = 3.
0 Adc — BDX33B, 33C/34B, 34C • Monolithic Construction with Build–In Base–Emitter Shunt resistors • TO–220AB Compact Package MAXIMUM RATINGS
BDX33B BDX33C* BDX34B * BDX34C
*Motorola Preferred Device
NPN
PNP
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