BDX33B, BDX33C (
NPN) BDX34B, BDX34C (
PNP)
Darlington Complementary Silicon Power
Transistors
These devices are designed for general purpose and low speed switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ.
) at IC = 4.
0 • Collector−Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 2.
5 Vdc (max) at IC = 3.
0 Adc − BDX33B, 33C/34B, 34C
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C
Symbol VCEO
Value
8...