BCW60A/B/C/D
BCW60A/B/C/D
General Purpose
Transistor
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO VCEO VEBO IC PC TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature
3
2 1 SOT-23 1.
Base 2.
Emitter 3.
Collector
Value 32 32 5 100 350 150
Units V V V mA
mW °C
©2002 Fairchild Semiconductor Corporation
Rev.
B2, December 2002
BCW60A/B/C/D
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO BVEBO ICES IEBO hFE
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Colle...