DatasheetsPDF.com

BCW60

Part Number	BCW60
Manufacturer	NXP
Description	NPN general purpose transistors
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors Product speciﬁc...
Datasheet	BCW60 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors Product speciﬁcation Supersedes data of 1997 Mar 10 1999 Apr 22 Philips Semiconductors Product speciﬁcation NPN general purpose transistors FEATURES • Low current (max.
100 mA) • Low voltage (max.
32 V).
APPLICATIONS • General purpose switching and amplification.
DESCRIPTION NPN transistor in a SOT23 plastic package.
PNP complements: BCW61 series.
handbook, halfpage BCW60 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER BCW60B BCW60C BCW60D Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
MAX.
32 32 5 100 200 200 250 +150 150 +150 MARKING CODE(1) AB∗ AC∗ AD∗ Top view 1 2 MAM255 2 Fig.
1 Simplified outline (SOT23) and symbol.
UNIT V V V mA mA mA mW °C °C °C 1999 Apr 22 2 Philips Semiconductors Product speciﬁcation NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BCW60B BCW60C BCW60D DC current gain BCW60B BCW60C BCW60D DC current gain BCW60B BCW60C BCW60D VCEsat VBEsat VBE collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage IC = 10 mA; IB = 0.
25 mA IC = 50 mA; IB = 1.
25 mA IC = 10 mA; IB = 0.
25 mA IC = 50 mA; IB = 1.
25 mA IC = 10 µA; VCE = 5 V IC = 2 mA; VCE = 5 V IC = 50 mA; VCE ...

Similar Datasheet

BCW29 PNP general purpose transistors - NXP
BCW29 Surface mount Si-Epitaxial PlanarTransistors - Diotec Semiconductor
BCW29 EPITAXIAL PLANAR PNP TRANSISTOR - KEC
BCW29 PNP General Purpose Transistors - Kexin
BCW29 Silicon Planar Epitaxial Transistor - Philips
BCW29 GENERAL PURPOSE TRANSISTOR - Motorola
BCW29 SILICON PLANAR EPITAXIAL TRANSISTORS - CDIL
BCW29LT1 General Purpose Transistors - Motorola Inc
BCW29LT1 General Purpose Transistors - Leshan Radio Company
BCW30 SMALL SIGNAL PNP TRANSISTORS - STMicroelectronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)