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BCW60

Siemens Semiconductor Group
Part Number BCW60
Manufacturer Siemens Semiconductor Group
Description NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
Published Mar 23, 2005
Detailed Description NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low ...
Datasheet PDF File BCW60 PDF File

BCW60
BCW60

Overview
NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX 70 G BCX 70 H BCX 70 J BCX 70 K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs Ordering Code (tape and reel) Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines.
Semiconductor Group 1 5.
91 BCW 60 BCX 70 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 2 BCW 60 BCX 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 60, BCW 60 FF BCX 70 Collector-base breakdown voltage IC = 10 µA BCW 60, BCW 60 FF BCX 70 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain 1) IC = 10 µA, VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 2 mA, VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 50 mA, VCE = 1 V BCW 60 ...


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