Part Number
|
BF1005S |
Manufacturer
|
Infineon Technologies AG |
Description
|
Silicon N-Channel MOSFET Tetrode |
Published
|
Mar 23, 2005 |
Detailed Description
|
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5 V ...
|
Datasheet
|
BF1005S
|
Overview
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005S.
.
.
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005S
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005SR
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Marking NZs NZs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C Storage temperature Channel...
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