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BF1005R

Infineon Technologies AG
Part Number BF1005R
Manufacturer Infineon Technologies AG
Description Silicon N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V •...
Datasheet PDF File BF1005R PDF File

BF1005R
BF1005R

Overview
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005.
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AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF1005 SOT143 1=S 2=D 3=G2 4=G1 - - BF1005R SOT143R 1=D 2=S 3=G1 4=G2 - - Marking MZs MZs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C Storage temperature Channel temperature VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch 8 25 10 3 200 -55 .
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150 150 V mA V mW °C 1Pb-containing package may be available upon special request Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 2007-04-20 BF1005.
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Thermal Resistance Parameter Channel - soldering point1) Symbol Rthchs Value ≤ 370 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
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DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 0 , VG2S = 6 V Gate 2 source leakage current ±VG2S = 8 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Operating current (selfbiased) VDS = 5 V, VG2S = 4 V Gate2-source pinch-off voltage VDS = 5 V, ID = 100 µA V(BR)DS 12 - -V +V(BR)G1SS 8 - 12 ±V(BR)G2SS 8 - 13 +IG1SS - 100 - µA ±IG2SS - - 50 nA IDSS - - 1.
5 mA IDSO 8 10 16 VG2S(p) - 1 -V 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-04-20 BF1005.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol V...


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