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BF1005S

Siemens Semiconductor Group
Part Number BF1005S
Manufacturer Siemens Semiconductor Group
Description Silicon N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating volt...
Datasheet PDF File BF1005S PDF File

BF1005S
BF1005S

Overview
BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1665 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1005S NZs Maximum Ratings Parameter Drain-source voltage Symbol Value 8 25 10 3 200 - 55 .
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+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -25-1998 BF 1005S Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol Values Parameter min.
DC characteristics Drain-source breakdown voltage typ.
100 13 1 max.
12 13 50 800 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 - V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current µA nA µA mA V VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current ±VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current I DSS I DSO VG2S(p) VDS = 5 V, V G1S = 0 , V G2S = 4.
5 V Operating current (selfbiased) VDS = 5 V, V G2S = 4.
5 V Gate 2-source pinch-off voltage VDS = 5 V, ID = 100 µA AC characteristics Forward transconductance (self biased) g fs Cg1ss Cdss G ps F 800 ∆Gps 40 30 2.
4 1.
3 19 1.
6 50 2.
7 - mS pF VDS = 5 V, V G2S = 4.
5 V, f = 1 kHz Gate 1-input capacitance (self biased) VDS = 5 V, V G2S = 4 V, f = 1 MHz Output capacitance (self biased) VDS = 5 V, V G2S = 4 V, f = 100 MHz Power gain (self biased) dB VDS = 5 V, V G2S ...


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