BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1012 Marking Ordering Code Pin Configuration MYs Q62702-F1487 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation , T S ≤ 76 °C Storage temperature Channel temperature Symbol Value 16 25 10 3 200 -55 .
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+150 150 V mW °C Unit V mA VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Thermal Resista...

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