DISCRETE SEMICONDUCTORS
DATA SHEET
BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs
Product specification Supersedes data of 1999 Dec 01 2000 Mar 29
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
FEATURES • Short channel
transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment.
handbook, 2 columns 4
BF1201; BF1201R...