DatasheetsPDF.com

BF1205

NXP
Part Number BF1205
Manufacturer NXP
Description Dual N-channel dual gate MOS-FET
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specificat...
Datasheet PDF File BF1205 PDF File

BF1205
BF1205

Overview
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES • Two low noise gain controlled amplifiers in a single package.
One with a fully integrated bias and one with a partly integrated bias • Internal switch reduces the number of external components • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio.
APPLICATIONS • Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment.
DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch.
The integrated switch is operated by the gate 1 bias of amplifier b.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect against excessive input voltage surges.
The transistor is encapsulated in SOT363 micro-miniature plastic package.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BF1205 − DESCRIPTION Plastic surface mounted package; 6 leads 1 2 Top view 3 g1 (a) g2 handbook, halfpage BF1205 PINNING - SOT363 PIN 1 2 3 4 5 6 gate 1 (a) gate 2 gate 1 (b) drain (b) source drain (a) DESCRIPTION d (a) 4 s d (b) 6 5 AMP a AMP b g1 (b) MGX429 Marking code: L4-.
Fig.
1 Simplified outline and symbol.
VERSION SOT363 2003 Sep 30 2 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS BF1205 MIN.
TYP.
MAX.
UNIT − − − − − 31 1.
8 2.
0 20 1.
2 1.
4 102 105 − Per MOS-FET; unless otherwise specified VDS ID Ptot yfs Cig1-ss Crss NF Xmod drain-source voltage d...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)