Part Number
|
BF1204 |
Manufacturer
|
NXP |
Description
|
Dual N-channel dual gate MOS-FET |
Published
|
Mar 23, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1204 Dual N-channel dual gate MOS-FET
Product specificat...
|
Datasheet
|
BF1204
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1204 Dual N-channel dual gate MOS-FET
Product specification Supersedes data of 2000 Nov 13 2001 Apr 25
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
FEATURES • Two low noise gain controlled amplifiers in a single package • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio.
APPLICATIONS • Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.
DESCRIPTION The BF1204 is a combi...
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