Part Number
|
BF1205 |
Manufacturer
|
NXP |
Description
|
Dual N-channel dual gate MOS-FET |
Published
|
Mar 23, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1205 Dual N-channel dual gate MOS-FET
Product specificat...
|
Datasheet
|
BF1205
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1205 Dual N-channel dual gate MOS-FET
Product specification 2003 Sep 30
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
FEATURES • Two low noise gain controlled amplifiers in a single package.
One with a fully integrated bias and one with a partly integrated bias • Internal switch reduces the number of external components • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio.
APPLICATIONS • Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analo...
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