DISCRETE SEMICONDUCTORS
DATA SHEET
BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs
Product specification 2003 Dec 16
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
FEATURES • Short channel
transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Excellent low frequency noise performance • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications.
BF1211; BF1211R; BF1211WR
PINNING PIN 1 2 3 4 drain gate 2 gate 1 DESCRI...