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2SC4180

Part Number 2SC4180
Manufacturer GME
Description Silicon Epitaxial Planar Transistor
Published Apr 20, 2018
Detailed Description Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  High voltage and current.  Power dissipation...
Datasheet 2SC4180




Overview
Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.
 High voltage and current.
 Power dissipation PC=150mW.
 Small package.
Pb Lead-free Production specification 2SC4180 APPLICATIONS  Audio frequency general purpose amplifier.
ORDERING INFORMATION Type No.
Marking 2SC4180 D15/D16/D17/D18 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 50 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F040 Rev.
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