DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513 N-channel silicon field-effect
transistors
Product specification File under Discrete Semiconductors, SC07 December 1997
Philips Semiconductors
Product specification
N-channel silicon field-effect
transistors
DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect
transistors in the miniature plastic envelope intended for applications up to the v.
h.
f.
range in hybrid thick and thin-film circuits.
Special features are the low feedback capacitance and the low noise figure.
These features make the product very suitable for applications such as the r.
f.
stages in f.
m.
portables (BF510), car radios (BF511) and mains radios (BF512)...