DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation • Short channel
transistor with high ratio Yfs :Cis • Low noise gain-controlled amplifier to 1 GHz • BF901R has reverse pinning.
DESCRIPTION Enhancement type field-effect
transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected.
They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especi...