DISCRETE SEMICONDUCTORS
DATA SHEET
BF904; BF904R N-channel dual gate MOS-FETs
Product specification Supersedes data of 1997 Sep 05 1999 May 17
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
FEATURES • Specially designed for use at 5 V supply voltage • Short channel
transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC.
APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.
DESCRIPTION Enhancement type field-effect
transistor in a plastic microminiature SOT143B and SOT...