DISCRETE SEMICONDUCTORS
DATA SHEET
BF990A N-channel dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07 April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
APPLICATIONS • RF applications such as: – Television tuners with 12 V supply voltage – Professional communication equipment.
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 drain gate 2 gate 1 DESCRIPTION source
Top view Marking code: M87.
MAM039 handbook, halfpage
BF990A
DESCRIPTION Depletion type field-effect
transistor in a plastic SOT143 microminiature package ...