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BF996S

NXP
Part Number BF996S
Manufacturer NXP
Description N-channel dual-gate MOS-FET
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semicon...
Datasheet PDF File BF996S PDF File

BF996S
BF996S

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
APPLICATIONS • RF applications such as: – UHF television tuners – Professional communication equipment.
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking code: MHp.
MAM039 handbook, halfpage BF996S DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.
4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.
1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig-1s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2−S = 4 V up to Tamb = 60 °C CONDITIONS − − − − 18 TYP.
MAX.
20 30 200 150 − 2.
6 − − UNIT V mA mW °C mS pF fF dB input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2−S = 4 V 2.
3 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2−S = 4 V 25 f = 200 MHz GS = 2 mS; BS = BSopt; ID = 10 mA; VDS = 15 V; VGS−2 = 4 V 1 April 1991 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS ID ID(AV) IG1-S IG1-S Ptot Tstg Tj PARAMETER drain-source voltage drain current (DC) average drain current gate 1 source gate 2 source total power dissipation storage temperature range junction temperature up to Tamb = 60 °C; note 1 CONDITIONS − − − − − − −65 − MIN.
BF996S MAX.
20 30 30 ±10 ±10 200 +150 150 V UNIT mA mA mA mA mW °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 V...


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