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BF991

NXP
Part Number BF991
Manufacturer NXP
Description N-channel dual-gate MOS-FET
Published Mar 23, 2005
Detailed Description BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As fro...
Datasheet PDF File BF991 PDF File

BF991
BF991

Overview
BF991 N-channel dual-gate MOS-FET Rev.
03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details.
In data sheets where the previous Philips references remain, please use the new links as shown below.
http://www.
philips.
semiconductors.
com use http://www.
nxp.
com http://www.
semiconductors.
philips.
com use http://www.
nxp.
com (Internet) sales.
addresses@www.
semiconductors.
philips.
com use salesaddresses@nxp.
com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.
V.
(year).
All rights reserved is replaced with: - © NXP B.
V.
(year).
All rights reserved.
- If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.
com).
Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors N-channel dual-gate MOS-FET Product specification BF991 FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
APPLICATIONS • VHF applications such as: – VHF television tuners and FM tuners – Professional communication equipment.
PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.
handbook, halfpage 4 3 d g2 g1 1 Top view 2 MAM039 s,b Marking code: %MA.
Fig.
1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP.
VDS ID Ptot Tj Yfs Cig1-s Crs F drain-source voltage drain current total power dissipation junction temperature transfer admittance input capacitance at gate 1 feedback capacitance noise figure up to Tamb = 60 °C f = ...


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