DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R Silicon N-channel dual-gate MOS-FETs
Product specification Supersedes data of April 1991
1996 Aug 01
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
FEATURES Short channel
transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional communications equipment.
DESCRIPTION
Depletion type field effect
transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected.
The
transistors ar...