DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ67W
NPN 8 GHz wideband
transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 8 GHz wideband
transistor
FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323 envelope.
It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total pow...