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BFQ67R

Vishay Telefunken
Part Number BFQ67R
Manufacturer Vishay Telefunken
Description Silicon NPN Planar RF Transistor
Published Mar 23, 2005
Detailed Description BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precauti...
Datasheet PDF File BFQ67R PDF File

BFQ67R
BFQ67R


Overview
BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device.
Observe precautions for handling.
Applications Low noise small signal amplifiers up to 2 GHz.
This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
Features D Small feedback capacitance D Low noise figure D High transition frequency 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFQ67 Marking: V2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFQ67R Marking: R67 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 13 652 13 570 2 3 BFQ67W Marking: WV2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Document Number 85022 Rev.
3, 20-Jan-99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (12) BFQ67/BFQ67R/BFQ67W Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 10 2.
5 50 200 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.
5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W www.
vishay.
de • FaxBack +1-408-970-5600 2 (12) Document Number 85022 Rev.
3, 20-Jan-99 BFQ67/BFQ67R/BFQ67W Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB = 5 mA VCE = 5 V, IC = 15 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IE...



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