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BFQ67T

NXP
Part Number BFQ67T
Manufacturer NXP
Description NPN 8 GHz wideband transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data o...
Datasheet PDF File BFQ67T PDF File

BFQ67T
BFQ67T

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 06 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT416 (SC-75) envelope.
APPLICATIONS Wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F Note 1.
Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1.
Ts is the temperature at the soldering point of the collector pin.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 75 °C; note 1 CONDITIONS open emitter open base open collector − − − − − −65 − MIN.
PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 75 °C; note 1 CONDITIONS open emitter open base MIN.
− − − − IC = 15 mA; VCE = 5 V; Tj = 25 °C 60 IC = 15 mA; VCE = 8 V; f = 2 GHz; − Tamb = 25 °C IC = 15 mA; VCE = 8 V; f = 1 GHz; − Tamb = 25 °C IC = 5 mA; VCE = 8 V; f = 1 GHz − TYP.
− − − − 100 8 13 1.
3 PINNING PIN 1 2 3 base emitter collector Marking code: V2.
BFQ67T DESCRIPTION NPN transistor in a plastic SOT416 (SC-75) package.
fpage 3 DESCRIPTION 1 Top view 2 MBK090 Fig.
1 SOT416.
MAX.
20 10 50 150 − − − − UNIT V V mA mW GHz dB dB MAX.
20 10 2.
5 50 150 +150 150 V V V UNIT mA mW °C °C 2000 Mar 06 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to sol...


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