DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ68
NPN 4 GHz wideband
transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband
transistor
DESCRIPTION
NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap.
All leads are isolated from the stud.
Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties.
It features very high output voltage capabilities.
It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV ...