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BFQ161

NXP
Part Number BFQ161
Manufacturer NXP
Description NPN video transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BFQ161 NPN video transistor Product specification Supersedes data of November 1995 F...
Datasheet PDF File BFQ161 PDF File

BFQ161
BFQ161

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BFQ161 NPN video transistor Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistor FEATURES • Low output capacitance • High gain bandwidth • High current applicability • Good thermal stability • Gold metallization ensures excellent reliability.
APPLICATIONS • Pre-stage driver in high resolution colour graphics monitors.
PINNING PIN 1 2 3 base collector emitter DESCRIPTION Fig.
1 DESCRIPTION NPN video transistor in a SOT54 (TO-92) plastic package.
page BFQ161 1 2 3 MSB033 Simplified outline (SOT54; TO-92).
QUICK REFERENCE DATA SYMBOL VCBO VCER IC Ptot hFE fT Tj Note 1.
Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VCER VEBO IC Ptot Tstg Tj Notes 1.
Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
2.
Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.
PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature Ts ≤ 75 °C; notes 1 and 2; see Fig.
3 open emitter open base RBE = 100 Ω open collector CONDITIONS − − − − − − −65 − MIN.
MAX.
20 10 19 3 500 1 +150 150 V V V V mA W °C °C UNIT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency junction temperature Ts ≤ 75 °C; note 1 IC = 300 mA; VCE = 5 V IC = 300 mA; VCE = 5 V; Tamb = 25 °C open emitter RBE = 100 Ω CONDITIONS − − − − 25 1 − MIN.
MAX.
20 19 500 1 − − 150 GHz °C V V mA W UNIT 1997 Oct 02 2 Philips Semiconductors Product specification NPN video transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a Rth s-a Note 1.
T...


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