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BFQ151

NXP
Part Number BFQ151
Manufacturer NXP
Description PNP video transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BFQ151 PNP video transistor Product specification File under Discrete Semiconductors...
Datasheet PDF File BFQ151 PDF File

BFQ151
BFQ151

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BFQ151 PNP video transistor Product specification File under Discrete Semiconductors, SC05 1997 Sep 19 Philips Semiconductors Product specification PNP video transistor FEATURES • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.
APPLICATIONS • Pre-stage driver between video amplifier and video module.
DESCRIPTION PNP video transistor in a SOT54 plastic package.
page BFQ151 1 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 MSB033 Fig.
1 Simplified outline SOT54.
QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature Ts ≤ 60 °C IC = −70 mA; VCE = −10 V IC = 0; VCB = −10 V CONDITIONS open emitter − − − 3.
5 1.
8 − TYP.
MAX.
−20 −100 1.
25 − − 175 V mA W GHz pF °C UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1.
Ts is the temperature at the soldering point of the collector pin.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 60 °C; note 1; see Fig.
2 open base open collector CONDITIONS open emitter − − − − − −65 − MIN.
MAX.
−20 −15 −3 −100 1.
25 +150 175 V V V mA W °C °C UNIT 1997 Sep 19 2 Philips Semiconductors Product specification PNP video transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1.
Ts is the temperature of the soldering point of the collector pin.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain transition frequency CONDITIONS IC = −0.
1 mA; IE = 0 IC = 0; IE = −0.
1 mA VCB = −10 V; IE = 0 IC = −70 mA; VCE = −10 V; see Fig.
3 IC = −70 mA; VCE = −...


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