Power Transistor
Power Transistor FEATURES Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) Complements the 2SB1184. APPLICATIONS Epitaxial planar type. NPN silicon transistor. Pb Lead-free Production specification 2SD1760 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Vo...
GME