Production specification
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
RDS(ON) =1.
2Ω@VGS = 10V.
Pb
Ultra Low gate charge (typical 28nC)
Lead-free
Low reverse transfer capacitance (CRSS = typical 12.
0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
BL8N60
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
600 V
VGS Gate -Source voltage
±30
V
Continuous Drain current TC=25℃ 7.
5 A
ID
Continuous Drain current TC=100℃
4.
6
A
EAS
Single Pulse Avalanche Energy(Note2)
230
mJ
EAR
Avalanche Energy,Repetiti...