CEM8958G
Dual Enhancement Mode Field Effect
Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 7A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 40mΩ @VGS = 4.
5V.
-30V, -4.
8A, RDS(ON) = 58mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2 87 65
1234 S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 30
VGS ±20
ID 7 IDM 28
P-Channel -30
±20
-4.
8 -19
Maximum Power Dissipation
PD 2.
0...