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CEM8958

Chino-Excel Technology
Part Number CEM8958
Manufacturer Chino-Excel Technology
Description Dual Enhancement Mode Field Effect Transistor(N and P Channel)
Published Mar 23, 2005
Detailed Description CEM8958 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RD...
Datasheet PDF File CEM8958 PDF File

CEM8958
CEM8958

Overview
CEM8958 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 40mΩ @VGS = 4.
5V.
-30V, -5.
2A, RDS(ON) = 52mΩ @VGS = -10V.
RDS(ON) = 80mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2 87 65 5 SO-8 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 7 IDM 20 P-Channel -30 ±20 -5.
2 -20 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units C/W Rev 1.
2005.
December 1 http://www.
cetsemi.
com CEM8958 N-Channel Electrical Characteristics TA = 25 C unl...


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