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CEM8958A

CET
Part Number CEM8958A
Manufacturer CET
Description Dual Enhancement Mode Field Effect Transistor
Published Oct 8, 2015
Detailed Description CEM8958A Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 6.8A, RDS(ON) = 28m...
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CEM8958A
CEM8958A

Overview
CEM8958A Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 6.
8A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 42mΩ @VGS = 4.
5V.
-30V, -4.
8A, RDS(ON) = 60mΩ @VGS = -10V.
RDS(ON) = 85mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
SOP-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous@TA= 25 C @TA= 70 C Drain Current-Pulsed a ID 6.
8 5.
4 IDM 27 P-Channel -30 ±20 -4.
8 -3.
7 -19 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Thermal Resistance, Junction-to-Case Symbol RθJA RθJc Limit 62.
5 40 Units C/W C/W This is prelimin...


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