DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD329
NPN power
transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07
Philips Semiconductors
Product specification
NPN power
transistor
FEATURES • High current (max.
3 A) • Low voltage (max.
20 V).
APPLICATIONS • Especially for battery equipped applications.
DESCRIPTION
NPN power
transistor in a TO-126; SOT32 plastic package.
PNP complement: BD330.
handbook, halfpage
BD329
PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION
2 3 1
1
2
3
Top view
MAM254
Fig.
1
Simplified outline (TO-126; SOT32) and symbol.
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