DatasheetsPDF.com

BD301

INCHANGE
Part Number BD301
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 22, 2020
Detailed Description isc Silicon NPN Power Transistor BD301 DESCRIPTION ·DC Current Gain - : hFE =30(Min.)@ IC= 3A ·Collector-Emitter Break...
Datasheet PDF File BD301 PDF File

BD301
BD301

Overview
isc Silicon NPN Power Transistor BD301 DESCRIPTION ·DC Current Gain - : hFE =30(Min.
)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.
) ·Complement to Type BD302 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 55 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.
3 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transi...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)