DatasheetsPDF.com

2N6668

Part Number 2N6668
Manufacturer NTE
Description Silicon PNP Transistors
Published Jul 6, 2018
Detailed Description 2N6666, 2N6667, 2N6668 Silicon PNP Transistors Darlington Power Amplifier TO−220 Type Package Description: The 2N6666, ...
Datasheet 2N6668




Overview
2N6666, 2N6667, 2N6668 Silicon PNP Transistors Darlington Power Amplifier TO−220 Type Package Description: The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO−220 type package designed for general purpose amplifier and low−speed switching applications.
Features: D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) − 2N6666 = 60V (Min) − 2N6667 = 80V (Min) − 2N6668 D Low Collector−Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A − − 2N6666 2N6667, 2N6668 Absolute Maximum Ratings: Collector−Emitter 2N6666 .
.
Voltage, .
.
.
V.
.
C.
E.
O.
.
.
.
.
.
.
.
.
...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)