2N6067 (SILICON)
PNP SILICON ANNULAR
TRANSISTOR
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designed for medium-current saturated switching and core driver applications.
• Fast Switching Times @ VCC = 40 Vdc ton = 40 ns (Max) toft = 80 ns (Max)
• Current-Gain-Bandwidth Product IT = 150 MHz (Min) @ IC = 50 mAde
• Low Collector-Emitter Saturation Voltage VCE(sat) = 0.
6 Vdc (Max) @ IC = 500 mAde
PNP SILICON SWITCHING
TRANSISTOR
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Power Dissipation @ TA "" 25°C
Derate above 25°C Total Power Dissipation@ TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
*THERMAL CHARACTERISTICS
Ch...