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2N60

ROUM
Part Number 2N60
Manufacturer ROUM
Description 2A 600V N-channel Enhancement Mode Power MOSFET
Published Jan 16, 2019
Detailed Description 2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanc...
Datasheet PDF File 2N60 PDF File

2N60
2N60

Overview
2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS standard.
VDSS = 600V RDS(on) （TYP)= 4.
0Ω ID = 2A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤4.
5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.
8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
4 Electrical Characteristics 4.
1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Drian-Source Voltage Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)(Note 1) Single Pulse Avalanche E...


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