DatasheetsPDF.com

2N60

PINGWEI
Part Number 2N60
Manufacturer PINGWEI
Description N-Channel MOSFET
Published Dec 31, 2020
Detailed Description 2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss...
Datasheet PDF File 2N60 PDF File

2N60
2N60

Overview
2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 2N60 ITO-220AB 2N60F TO-262 2N60H TO-263 2N60B TO-252 2N60G TO-251 2N60D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 2N60 600 ±30 2 8 120 2.
0 5.
4 4.
5 -55 to +150 260 10 1.
1 UNIT V A mJ A mJ V/ns ℃ ℃ lbf·in N·m Thermal Characteristics Parameter Maximum Junction-to-Case Maximum Power Dissipation TC=25℃ Symbol RthJC PD ITO-220 4 32 TO-220 2 62 TO-262 TO-263 2 62 TO-251 TO-252 6 21 Units ℃/W W - - Rev.
14-1 http:// www.
perfectway.
cn Electrical Characteristics (TC=25℃,unless otherwise noted) Parameter Symbol Test Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA Breakdown Temperature Coefficient ΔBVDSS Reference to 25℃， /ΔTJ ID=250μA Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V Gate-Body Leakage Current, Forward IGSSF VGS=30V, VDS=0V Gate-Body Leakage Current, Reverse IGSSR VGS=-30V, VDS=0V On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=VGS, ID=250uA Drain-Source On-State Resistance RDS(on) VGS=10V, ID=1A Dynamic Characteristics Input Capacitance Ciss VDS=25V, VGS=0V, Output Capacitance Coss f=1.
0MHZ Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) VDD=300V, ID=2A, Turn-On Rise Time tr RG=25Ω (Note4,5) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total G...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)