2N5161 (SILICON) 2N5162
STYLE 1: PIN 1.
EMITTER 2.
BASE 3.
COLLECTOR
CASE 36
(TO-60)
Case common to emitter
PNP silicon RF power
transistors designed for amplifier or oscillator applications in military and industrial equipment.
Suitable for use as Class B or C output or power oscillator in VHF applications
MAXIMUM RATINGS Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation@ TC =25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
VCEO VCB VEB IC PD
TJ , Tstg
2NS161 2NS162
40
60
4.
0
1.
5 5.
0
20 0.
114
50 0.
286
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watts W;OC
°c
FIGURE 1 - 175 MHz TEST CIRCUITS...