100V P-Channel MOSFETs
PDD0959
General Description These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration
D
D
S G
H
G
S
BVDSS -100V
RDSON 45m
ID -30A
Features -100V,-30A, RDS(ON) 45mΩ@VGS = -10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications Networking Load Switch LED applicat...