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PDD0959

Potens semiconductor
Part Number PDD0959
Manufacturer Potens semiconductor
Description P-Channel MOSFETs
Published Aug 22, 2018
Detailed Description 100V P-Channel MOSFETs PDD0959 General Description These P-Channel enhancement mode power field effect transistors are...
Datasheet PDF File PDD0959 PDF File

PDD0959
PDD0959

Overview
100V P-Channel MOSFETs PDD0959 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D D S G H G S BVDSS -100V RDSON 45m ID -30A Features  -100V,-30A, RDS(ON) 45mΩ@VGS = -10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Av...


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