Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC856 BC857 BC858
SILICON PLANAR EPITAXIAL
TRANSISTORS
P–N–P
transistors
Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (+VBE = 1 V) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation
up to Tamb = 60 °C Junction temperature Small–signal current gain
–IC = 2 mA; –VCE = 5 V; f = 1 kHz Transit...