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BC807

UTC
Part Number BC807
Manufacturer UTC
Description PNP SILICON TRANSISTOR
Published Apr 14, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * ...
Datasheet PDF File BC807 PDF File

BC807
BC807

Overview
UNISONIC TECHNOLOGIES CO.
, LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818  ORDERING INFORMATION Ordering Number Package Note: BC807G-xx-AE3-R BC807G-xx-AL3-R BC808G-xx-AE3-R BC808G-xx-AL3-R Pin Assignment: C: Collector B: Base SOT-23 SOT-323 SOT-23 SOT-323 E: Emitter Pin Assignment 123 EBC EBC EBC EBC Packing Tape Reel Tape Reel Tape Reel Tape Reel  MARKING 807-16 808-16 9GAG 807-25 808-25 www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 807-40 808-40 1 of 4 QW-R206-026.
F BC807/BC808 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage BC807 BC808 VCES -50 V -30 V Collector-Emitter Voltage BC807 BC808 VCEO -45 V -25 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -800 mA Collector Dissipation PC 310 mW Junction Temperature TJ +150 C Storage Temperature TSTG -65 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BC807 Collector-Emitter Breakdown Voltage BC808 BVCEO IC=-10mA, IB=0 -45 -25 V V BC807 Collector-Emitter Breakdown Voltage BC808 BVCES IC=-0.
1mA, VBE=0 -50 -30 V V Emitter-Base Breakdown Voltage BVEBO IE=-0.
1mA, IC=0 -5 V Collector Cut-OFF Current ICES VCE=-25V, VBE=0 -100 nA Emitter Cut-OFF Current IEBO VEB=-4V, IC=0 -100 nA DC Current Gain hFE1 IC=-100mA, VCE=-1V hFE2 IC=-300mA, VCE=-1V 100 60 630 Collector-Emitter Saturation Voltage VCE(SAT) IC=-500mA, IB=-50mA -0.
7 V Base-Emitter ON Voltage VBE(ON) IC=-300mA, VCE=-1V -1.
2 V Current Gain Bandwidth Product f...


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