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BC807

AUK
Part Number BC807
Manufacturer AUK
Description PNP Silicon Transistor
Published Apr 15, 2024
Detailed Description Semiconductor Descriptions • High current application • Switching application BC807 PNP Silicon Transistor Features • ...
Datasheet PDF File BC807 PDF File

BC807
BC807

Overview
Semiconductor Descriptions • High current application • Switching application BC807 PNP Silicon Transistor Features • Suitable for AF-Driver stage and low power output stages • Complementary Pair with BC817 Ordering Information Type NO.
BC807 Outline Dimensions Marking LA : hFE rank Package Code0 SOT-23 unit : mm 2.
4±0.
1 1.
30±0.
1 2.
9±0.
1 1.
90 Typ.
1 3 2 0.
45~0.
60 0.
4 Typ.
0.
2 Min.
PIN Connections 1.
Base 2.
Emitter 3.
Collector -0.
03 +0.
05 1.
12 Max.
0.
38 0~0.
1 0.
124 KST-2024-000 1 BC807 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -50 -35 -5 -800 200 150 -55~150 (Ta=25°C) Unit V V V mA mW °C °C Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob IC=-1mA, IB=0 VCE=-1V, IC=-300mA IC=-500mA, IB=-50mA VCB=-25V, IE=0 VCE=-1V, IC=-100mA VCB=-5V, IE=10mA f=100MHz VCB=-10V, IE=0, f=1MHz * : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630 Min.
-35 - 100 Typ.
- (Ta=25°C) Max.
Unit - V -1.
2 V -700 mV -100 nA 630 - - 100 - MHz - 16 - pF KST-2024-000 2 Electrical Characteristic Curves Fig.
1 Pc-Ta Fig.
2 IC -VBE BC807 Fig.
3 IC - VCE Fig.
4 hFE - IC Fig.
5 VCE(sat) - IC KST-2024-000 3 ...


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